RF Device Process Development and Integration Engineer

Qorvo - Hillsboro, OR (30+ days ago)3.6


Site: OR - Hillsboro
Business Title: RF Device Process Development and Integration Engineer
Shift: Normal Day

SUMMARY:
The ideal candidate will assist in developing device models and help guide HBT and pHEMT device design to meet future product requirements for cellular, WiFi and base station applications. The role is expected to evolve based on the engineer’s interest and capabilities. Additionally, new process development is required to meet high yield and device performance targets. Working with Qorvo’s GaAs development team, the ideal candidate would also participate as a process integration engineer in identifying and solving epi and fabrication problems before new HBT and pHEMT processes are released to production.

QUALIFICATIONS:
A PhD or MS degree in Materials Science or Electrical Engineering, or related disciplines
The candidate must have at least 3-5 years’ experience in III-V semiconductor epi bandgap engineering
A fundamental understanding of how HBT and pHEMT epi process development impacts RF performance is essential
Experience with epi design for high performance device applications required; experience with RF device design, particularly for InGaP/GaAs or InP HBT very desirable
Device characterization experience for RF technologies a strong plus
Willingness to work with external epi suppliers for device performance improvement and epi process development; epi growth experience a big plus
Experience with process development, process integration and/or unit process ownership background is also strongly recommended
Ability to work with a small development team within a larger manufacturing organization