Functions / Duties:
The SiC Epitaxy Process Development Engineer wil be responsible for the development and continual imrprovement activities for the SiC EPI Process.
Development of SiC Epitaxy growth on Single Wafer Reactors.
Oversee optimum operation of Epi Tools.
Cultivate Epi metrology measurement techniques.
Perform maintenance (PM and troubleshooting) activities .
Training of new staffing as need be.
Summarize, present and publish experimental results to all associated groups.
Current Skills / Competencies:
Must have in-depth process knowledge of SIC EPI Growth.
High familiarity of hardware relating to LPE-106 EPI Reactors.
Solid understanding of SiC Epi characterization techniques like FTIR, CV, Pl Inspection.
Good verbal and written communication skills with the ability to work seamlessly with individuals from multiple nationalities
Proven ability to do independent research, publish papers, patents
Proven team worker & self-starter.
Excellent problem solving & decision making skills.
Strong sense of ownership.
Ability to support 24/7 manufacturing.
Minimum Educational Requirements:
PhD in Materials Science, Electrical Engineering, Physics or Masters Degree with 5+ years experience in the semiconductor industry.
Kontaktperson: Valentina Orta
oder online unter: hrlbb(at)xfab.com