At Northrop Grumman we develop cutting-edge technology that preserves freedom and advances human discovery. Our pioneering and inventive spirit has enabled us to be at the forefront of many technological advancements in our nation's history - from the first flight across the Atlantic Ocean, to stealth bombers, to landing on the moon. We continue to innovate with developments from launching the first commercial flight to space, to discovering the early beginnings of the universe.
Northrop Grumman Aerospace Systems (NGAS) Research & Technology is seeking a Principal Research Scientist in New Semiconductors & Devices, reporting to the Director of Basic Research. This position will be located in Manhattan Beach, CA. Experienced candidates may also be considered at the Staff Research Scientist grade.
Research scientists' responsibilities include the planning, prioritization, and execution of foundational research to advance the frontier of discovery in aerospace science and technology. Science staff are called upon to act as research principal investigators, as well as to support their peers through mutual collaboration on multidisciplinary projects and to transition emerging research into applied technology development.
In this role, the selected candidate will be expected to:
Act as a subject matter expert in a field of study related to Semiconductor Devices, and have general knowledge of related disciplines.
Perform impactful original research with a significant degree of autonomy, and communicate results in peer-reviewed journals and at scientific conferences
Create and leverage strategic collaborations with partner organizations such as universities, consortia, industrial suppliers, and national labs
Collaborate with peers on major research thrusts and multidisciplinary projects, with the flexibility to take on diverse roles such as contributor, consulting expert, and principal investigator
Generate intellectual property and transition emerging research into technological discriminators for NGAS, enabling breakthrough capabilities for USG missions
Under consultation with the New Semiconductors & Devices Laboratory Group Lead, develop and communicate a multi-year vision for basic research, with regular analysis of alternative courses of action and risk/reward scenarios
Master's degree in Applied Physics, Materials Science, Electrical Engineering, or closely related field from an accredited university with at least 7+ years of work experience in field, or:
Ph.D in Applied Physics, Materials Science, Electrical Engineering, or closely related field from an accredited university with at least 4 years of work experience in field
Experience as a researcher in Semiconductor Materials & Devices or closely related discipline
Strong analytical and problem solving ability
Ability to obtain and maintain an in-scope DoD Secret or SCI clearance
Ph.D in Applied Physics, Materials Science, Electrical Engineering, or closely related field from an accredited university with at least 5 years of work experience in field
Proficiency in cost & schedule management, communication skills, and team leadership
Experience as a researcher in topics such as: 2D materials, topological materials, phase change materials, integrated photonics, high frequency electronics, or high power electronics
Experience in materials growth, fabrication, and characterization in a cleanroom environment
Active in-scope DoD Secret or SCI clearance
Northrop Grumman is committed to hiring and retaining a diverse workforce. We are proud to be an Equal Opportunity/Affirmative Action Employer, making decisions without regard to race, color, religion, creed, sex, sexual orientation, gender identity, marital status, national origin, age, veteran status, disability, or any other protected class. For our complete EEO/AA and Pay Transparency statement, please visit www.northropgrumman.com/EEO . U.S. Citizenship is required for most positions.