Top 15 Rf engineer Jobs in Essex Junction, Vt

RF Technology Development Engineer – Principal Engineer
GLOBALFOUNDRIES —Essex Junction, VT
- $85,000 - $146,000 a year
- Full-time
- English
- Master's degree
- Analysis skills
RF Technology Development Device Engineer - MTS
GLOBALFOUNDRIES —Essex Junction, VT
- $98,000 - $176,000 a year
- Full-time
- 6 years
- Bachelor of Science
- English
Quantum Test and Characterization
GLOBALFOUNDRIES —Essex Junction, VT
- $85,000 - $146,000 a year
- Full-time
- 5 years
- Bachelor of Science
- Analysis skills
Regulatory Engineer - US
OnLogic —South Burlington, VT
- $120,000 - $160,000 a year
- Full-time
- Computer Science
- 5 years
- Laboratory experience
- Paid parental leave
- Employee stock purchase plan
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Low-Temperature Bonding Engineer
GLOBALFOUNDRIES —Essex Junction, VT
- $85,000 - $146,000 a year
- Full-time
- Bachelor of Science
- English
- Mid-level
12d
Topological Qubit Device Engineer
GLOBALFOUNDRIES —Essex Junction, VT
- $98,000 - $176,000 a year
- Full-time
- 5 years
- Bachelor of Science
- Analysis skills
Quantum Assembly Engineer
GLOBALFOUNDRIES —Essex Junction, VT
- $118,000 - $210,000 a year
- Full-time
- English
- 8 years
- Doctor of Philosophy
Silicon Photonic (SiPh) Test Engineer - Engineer Test Engineering.
GLOBALFOUNDRIES —Essex Junction, VT
- $69,000 - $145,800 a year
- Full-time
- Computer science
- Computer Science
- Java
Quantum Bump Integration Engineer
GLOBALFOUNDRIES —Essex Junction, VT
- $98,000 - $176,000 a year
- Full-time
- 5 years
- English
- Continuous improvement
SMTS Technology Development
GLOBALFOUNDRIES —Essex Junction, VT
- $118,000 - $210,000 a year
- Full-time
- Bachelor of Science
- 8 years
- Bachelor's degree
3d

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RF Technology Development Device Engineer - MTS
GLOBALFOUNDRIES —Essex Junction, VT
Experience in RF device design and characterization including high frequency design, measurement and analysis. RF device design and characterization experience.
$98,000 - $176,000 a year
Topological Qubit Device Engineer
GLOBALFOUNDRIES —Essex Junction, VT
The engineer will work on device physics in cryogenic environments, develop TCAD-based models, support device layout and test structure design, and analyze…
$98,000 - $176,000 a year

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rf engineer jobs near essex junction, vt

RF Technology Development Engineer – Principal Engineer

GLOBALFOUNDRIES -
Essex Junction, VT

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Job Details

Full-time
$85,000 - $146,000 a year

Qualifications

English
Electrical engineering training
Data analytics
Semiconductor experience

Full Job Description

About GlobalFoundries

GlobalFoundries (GF) is a leading full-service semiconductor foundry providing a unique combination of design, development, and fabrication services to some of the world’s most inspired technology companies. With a global manufacturing footprint spanning three continents, GF makes possible the technologies and systems that transform industries and give customers the power to shape their markets. For more information, visit www.gf.com .

New College Graduates Overview:

We offer many full-time employment paths for recent graduates, which provide accelerated training in a fast-paced work environment, cross-functional working opportunities, and talent mobility. New college graduates are provided with mentorship, networking, and leadership opportunities, which give our new team members life-long connections and skills.

Summary of Role:

GlobalFoundries is a leading full-service semiconductor foundry with a global manufacturing footprint spanning three continents. GlobalFoundries' RF Technology Development Organization is looking for an device and integration engineer in developing semiconductor technologies to join our RF team in Essex Junction, VT

Essential Responsibilities include:

Responsible for development, optimization, and qualification of FEOL and BEOL semiconductor devices and processes to meet performance, cost and yield requirements
Design, electrical characterization and analysis of RF devices including FET, bipolar, diodes and passives.
Conduct theoretical studies or simulations to optimize the device performance and benchmark it against state of the art
Responsible for the DC and RF characterization and analysis including s-parameter, noise figure and loadpull
DOE design, execution, and analysis of results.
Partner with unit process module engineers, failure analysis and characterization team to improve device performance and yield
Own and drive technical process problem solving.
Interact with internal & external customers and respond to technical queries.
Establish new technology design rules, test structures and test methodologies.
Innovate new methods of continuous process/device improvement.

Other Responsibilities:

Perform all activities in a safe and responsible manner and support all Environmental, Health, Safety & Security requirements and programs.

Required Qualifications:

Education – Graduating with Master’s or PhD in Electrical, Materials Science, or other relevant engineering or physical science discipline from an accredited degree program.
Background in CMOS device physics, semiconductor processing, and characterization
Strong data analysis skills
Excellent interpersonal skills, both oral and written
Must have at least an overall 3.0 GPA and proven good academic standing.
Language Fluency - English (Written & Verbal)

Preferred Qualifications:

Experience in Silicon or SiGe BiCMOS FEOL or BEOL processing and/or semiconductor process development
Experience in RF device design and characterization including high frequency design, measurement and analysis
Experience with Cadence or any other layout and simulation tool
Prior related internship or co-op experience.
Demonstrated prior leadership experience in the workplace, school projects, competitions, etc.
Project management skills, i.e. the ability to innovate and execute solutions that matter; the ability to navigate ambiguity.
Strong written and verbal communication skills
Strong planning & organizational skills

Expected Salary Range

$85,000.00 - $146,000.00

The exact Salary will be determined based on qualifications, experience and location.

If you need a reasonable accommodation for any part of the employment process, please contact us by email at [email protected] and let us know the nature of your request and your contact information. Requests for accommodation will be considered on a case-by-case basis. Please note that only inquiries concerning a request for reasonable accommodation will be responded to from this email address.

An offer with GlobalFoundries is conditioned upon the successful completion of pre-employment conditions, as applicable, and subject to applicable laws and regulations.

GlobalFoundries is fully committed to equal opportunity in the workplace and believes that cultural diversity within the company enhances its business potential. GlobalFoundries goal of excellence in business necessitates the attraction and retention of highly qualified people. Artificial barriers and stereotypic biases detract from this objective and may be illegally discriminatory.

All policies and processes which pertain to employees including recruitment, selection, training, utilization, promotion, compensation, benefits, extracurricular programs, and termination are created and implemented without regard to age, ethnicity, ancestry, color, marital status, medical condition, mental or physical disability, national origin, race, religion, political and/or third-party affiliation, sex, sexual orientation, gender identity or expression, veteran status, or any other characteristic or category specified by local, state or federal law

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rf engineer jobs in essex junction, vt

RF Technology Development Engineer – Principal Engineer

RF Technology Development Device Engineer - MTS

Quantum Test and Characterization

Regulatory Engineer - US

Low-Temperature Bonding Engineer

Topological Qubit Device Engineer

Quantum Assembly Engineer

Silicon Photonic (SiPh) Test Engineer - Engineer Test Engineering.

Quantum Bump Integration Engineer

SMTS Technology Development

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